세종대학교 물리학과
세종대학교 물리학과
학과소개 학과소개 새소식 학사정보 연구실/사람들 동문마당 게시판/자료실


2015. 10. 07.
[콜로퀴움] Atomic and Electronic Properties of Graphene-based Heterostructure

‧제목  Atomic and Electronic Properties of Graphene-based
          Heterostructure
‧연사  송영재 교수님 (성균관대 물리학과)
‧일시  2015년 10월 7일 (수요일) 오후 5시
‧장소  영실관 613호

초록

Electronic structure of graphene is affected by number of graphene layers and stacking order.[1,2] Control of layer number as well as scalability has been the main issues for device applications based on graphene. A new and unique CVD method is proposed to synthesize epitaxial multilayer graphene on copper by an iterative process of graphene growth and h-BN etching in chemical vapor deposition (CVD). A h-BN thin film is utilized to provide a gap of well-defined thickness for introducing the precursors and to play the role of the epitaxial growth of multilayer graphene. A thin h-BN film, initially-CVD grown on copper,[3] is locally etched out by hydrogen atoms decomposed from CH4 during the sequential graphene growth, which generates additional growth channels of graphene adlayers again under the first graphene layer. The crystallinity with AB stacking was confirmed by Raman analysis and selected-area electron diffraction measurements as well as statistical studies of optical microscope images. Graphene growth with a h-BN template suggests a potential way for controlling the specific layer number of large-area graphene in CVD for the device applications of graphene.


1.        Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S. & Geim, A. K. The electronic properties of graphene. Rev. Mod. Phys. 81, 109–162 (2009).
2.        Geim, A. K. & Novoselov, K. S. The rise of graphene. Nat. Mater. 6, 183–191 (2007).
3.        Wang, M. et al. A Platform for Large-Scale Graphene Electronics - CVD Growth of Single-Layer Graphene on CVD-Grown Hexagonal Boron Nitride. Adv. Mater. 25, 2746–2752 (2013).





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